摘要
A voltage reference of low supply voltage and low power consumption has been proposed and simulated using 0.18 mu m process in this paper. Utilizing the body effect, temperature compensation is achieved without using any other special devices such as thick gate oxides MOSFETs with higher threshold. The simulation results show that the line sensitive is 0.73 ppm/V in a supply voltage range of 0.6V to 2V and the temperature coefficient is typically 23.7 ppm/degrees C in a temperature range of -20 degrees C to 80 degrees C with the power consumption of 30.5 nW at room temperature. The power supply rejection ratio is -40 dB at 10 Hz and -32 dB at 100 Hz, respectively.
- 出版日期2013
- 单位中山大学