A new growth method for the synthesis of 3C-SiC nanowires

作者：Attolini Giovanni^*; Rossi Francesca; Fabbri Filippo; Bosi Matteo; Watts Bernard Enrico; Salviati Giancarlo

来源：Materials Letters, 2009, 63(29): 2581-2583.

DOI：10.1016/j.matlet.2009.09.012

• Silicon carbide
• Nanowires
• TEM
• Cathodoluminescence

A new method has been developed to grow nickel-catalysed Sic nanowires on silicon, by a chemical reaction involving carbon tetrachloride as a single precursor. This produces long crystalline 3C-SiC nanowires with (111) axis, as verified by transmission electron microscopy. A broad optical emission centred at about 2 eV is detected by cathodoluminescence spectroscopy.The Gaussian component at about 2.2 eV corresponds to the indirect 3C-SiC band gap emission, while the dominant red emission is related to oxygen incorporation.

• 出版日期2009-12-15