Fabrication and Characterization of Floating Memory Devices Based on Thiolate-Protected Gold Nanoclusters

作者：Hirata Naoyuki; Sato Minako; Tsunemi Eika; Watanabe Yoshio; Tsunoyama Hironori; Nakaya Masato; Eguchi Toyoaki; Negishi Yuichi; Nakajima Atsushi^*

来源：Journal of Physical Chemistry C, 2017, 121(20): 10638-10644.

DOI：10.1021/acs.jpcc.6b09339

The floating memory properties of thiolateprotected gold (Au:SR) nanoclusters, Au-25(SR)(18), Au-38(SR)(24), Au-144(SR)(60), and Au-333(SR)(79) (R = C12H25), and Au colloids were investigated using four-probe measurements in vacuum. Uniform and monolayer films of Au:SR nanoclusters or Au colloids were formed as floating memory layers on p-type Si substrates by Langmuir-Blodgett method. The fluoropolymer (CYTOP, similar to 15 nm thick) was spin-coated on top to form a hydrophobic insulating layer. Using Au dot (similar to 40 nm thick) as the anode electrode, the capacitance voltage (C-V) measurements were performed using the Au and Cu plate electrodes as contact points for the two probes. Clockwise hysteresis curves originating from the Au:SR nanoclusters or Au colloids were observed, and the hysteresis width was dependent on the size of the Au:SR nanoclusters and the sample temperature. In particular, for the Au-38(SR)(24) nanocluster, multiple phases were observed in the C-V curve, implying their application in multivalued memory devices.

• 出版日期2017-5-25