An approach to tune the amplitude of surface ripple patterns

作者：Kumar Tanuj^*; Kumar Ashish; Kanjilal D

来源：Applied Physics Letters, 2013, 103(13): 131604.

DOI：10.1063/1.4822302

An approach is presented to tune the amplitude of ripple patterns using ion beam. By varying the depth location of amorphous/crystalline interface, ripple patterns of different amplitude with similar wavelength were grown on the surface of Si (100) using 50 keV Ar+ beam irradiation. Atomic force microscopy study demonstrates the tuning of amplitude of ripples patterns for wide range. Rutherford backscattering channeling measurement was performed to measure the depth location of amorphous/crystalline interface. It is postulated that the ion beam stimulated solid flow inside the amorphous layer controls the wavelength, whereas mass rearrangement at amorphous/crystalline interface controls the amplitude.

• 出版日期2013-9-23