科研之友
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摘要
The authors report a rapid reaction between Au and amorphous Si (a-Si), which occurred at a much faster rate compared to the case of crystal Si/Au reaction. With an amorphous Si coating layer on crystal Si (c-Si) wafer, air voids and craters were prevented from forming at the Si/Au bonding interface, but were usually found at the crystal Si/Au bonding interface. The uniform liquid eutectic Au-Si alloy quickly formed at the Au/amorphous Si bonding interface is the key for the prevention of air voids and craters. This amorphous Si/Au bonding process enables the feasibility of eutectic Au/Si bonding for wafer bonding applications.
- 出版日期2007-3-26
- 单位中央民族大学
