Embedded Co islands on Ge(001)

作者：Zandvliet Harold J W^*; van Houselt Arie; Hegeman Petra E

来源：Surface Science, 2011, 605(11-12): 1129-1132.

DOI：10.1016/j.susc.2011.03.021

• Scanning tunneling microscopy
• Germanium
• Cobalt
• Self-assembly

The adsorption of Cobalt (Co) on Germanium (Ge) (001) surfaces has been studied using scanning tunneling microscopy. Upon annealing at temperatures of 500-550 K well-ordered rectangular shaped embedded islands are formed. Based on our scanning tunneling microscopy data we propose that the elementary building block of these embedded islands consist of six Co atoms arranged in a hexagonal pattern. A statistical analysis reveals that the embedded Co islands exhibit an attractive interaction in a direction perpendicular to the substrate dimer rows and a repulsive interaction in a direction along the substrate dimer rows. The embedded Co islands eventually convert to perfectly straight and micrometers long nanowires upon annealing at temperatures that exceed 700-750 K.

• 出版日期2011-6