A phenomenological memristor model for short-term/long-term memory

作者：Chen Ling; Li Chuandong^*; Huang Tingwen; Ahmad Hafiz Gulfam; Chen Yiran

来源：Physics Letters, Section A: General, Atomic and Solid State Physics , 2014, 378(40): 2924-2930.

DOI：10.1016/j.physleta.2014.08.018

• Memristor
• Ion diffusion
• Short-term memory
• Long-term memory
• Forgetting effect

Memristor is considered to be a natural electrical synapse because of its distinct memory property and nanoscale. In recent years, more and more similar behaviors are observed between memristors and biological synapse, e.g., short-term memory (STM) and long-term memory (LTM). The traditional mathematical models are unable to capture the new emerging behaviors. In this article, an updated phenomenological model based on the model of the Hewlett-Packard (HP) Labs has been proposed to capture such new behaviors. The new dynamical memristor model with an improved ion diffusion term can emulate the synapse behavior with forgetting effect, and exhibit the transformation between the STM and the LTM. Further, this model can be used in building new type of neural networks with forgetting ability like biological systems, and it is verified by our experiment with Hopfield neural network.

• 出版日期2014-8-14
• 单位重庆大学