Amorphous indium-gallium-zinc oxide thin-film transistors instability and stress evaluation by Stretched-Exponential model

作者：Shih Tsung Hsiang^*; Fang Shou Wei; Lee Jen Yu; Lin Guan Yu; Chen Yu Hung; Hsin Lung Pao; Li Hsin Hung; Yang Chin Wei; Chen Chien Tao; Lu Hsiung Hsing; Cheng Kai Chung; Lin Chih Yuan; Chen Chia Yu; Yang Chun Ming; Tsai He Ting; Lin Yu Hsin

来源：Solid-State Electronics, 2012, 73: 74-77.

DOI：10.1016/j.sse.2012.04.001

• TFTs
• IGZO
• TiO2
• Stability
• S-E model

We have successfully fabricated large sized amorphous indium-gallium-zinc-oxide based active-matrix liquid-crystal displays, which uses Molybdenum/Aluminum/Titanium as source/drain electrode. In this study, an oxygen-rich etch stop layer acts as the oxygen atom supplier and converts the titanium layer into titanium oxide layer, which is found to induce instability of the device. Sample without titanium oxide has an initial threshold voltage shift is less than +/- 0.1 V after the repeatedly measuring over a period of two weeks. In addition, the IGZO based device demonstrated superior transfer characteristic. This paper established that the stability of the amorphous indium-gallium-zinc-oxide based active-matrix liquid-crystal display can be predicted by Stretched-Exponential model.

• 出版日期2012-7