An Improved Empirical Large-Signal Model for the GaAs- and GaN-Based HEMTs

作者：Liu, Lin-Sheng^*

来源：International Journal of RF and Microwave Computer-Aided Engineering, 2011, 21(3): 343-352.

DOI：10.1002/mmce.20523

• large-signal model
• equivalent-circuit
• parameter extraction
• HEMT

A complete empirical large-signal model for the GaAs-and GaN-based HEMTs is presented. Three generalized drain current I-V models characterized by the multi-bias Pulsed I-V measurements are presented along with their dependence on temperature and quiescent bias state. The new I-V equations dedicated for different modeling cases are kept accurate enough to the higher-order derivatives of drain-current. Besides, an improved charge-conservative gate charge Q-V formulation is proposed to extract and model the nonlinear gate capacitances. The composite nonlinear model is shown to accurately predict the S-parameters, large-signal power performances as well as the two-tone intermodulation distortion products for various types of GaAs and GaN HEMTs.

• 出版日期2011-5
• 单位电子科技大学