Analysis of characteristics of photodetectors based on InGaAs heteroepitaxial structures for 3D imaging

作者：Iakovleva N I^*; Boltar K O; Sednev M V; Nikonov A V

来源：Journal of Communications Technology and Electronics, 2017, 62(9): 1061-1065.

DOI：10.1134/S1064226917090200

• InGaAs
• InP
• short-wavelength infrared (SWIR) infrared (IR) spectral range
• heteroepitaxial structure (HES)
• focal plane array (FPA)
• photodetector
• dark current
• barrier layer

The 320 x 256 focal plane arrays based on NEuro(+)-B-n-N+ tetralayer heterostructures with a wide-gap barrier layer have been investigated. The heterostructures with a narrow-gap n-InGaAs absorbing layer were grown by means of metalorganic vapor phase epitaxy on InP substrates. The band discontinuity between the In0.53Ga0.47As absorbing layer and the In0.52Al0.48As barrier layer is removed by growing a thin four-component n-AlInGaAs layer with the bandgap gradient variation. Delta-doped layers included into the heterostructures make it possible to lower the barrier in the valence band and eliminate the nonmonotonicity of energy levels. The experimental study of the dark current has been performed. It has been revealed that the average value of the dark current does not exceed 10 fA for the photodiode arrays with a pitch of 30 mu m.

• 出版日期2017-9