Analysis of the composition of (Al,Ga)As alloys by secondary ion mass spectroscopy and X-ray diffractometry

作者：Drozdov Yu N^*; Drozdov M N; Daniltsev V M; Khrikin O I; Yunin P A

来源：Semiconductors, 2012, 46(11): 1392-1395.

DOI：10.1134/S1063782612110061

Calibration lines for the layer-by-layer analysis of the concentration of matrix elements in Al (x) Ga1 - x As layers are obtained using a TOF.SIMS-5 secondary-ion mass spectrometer. The alloy concentration for the set of test samples was independently measured by high-resolution X-ray diffractometry allowing for deviation of the lattice constants and elastic moduli from Vegard's law. It is shown that when using Cs+ sputtering ions and a Bi+ beam in secondary-ion mass spectrometry, the dependence of the intensity ratio Y(CsAl+)/Y(CsAs+) on x(AlAs) is close to linear for positive ions; and when detecting negative ions, the dependence Y(Al2As-)/Y(As-) on x is close to linear. These data allow us to normalize the profiles of layer-by-layer analysis in the Al (x) Ga1 - x As/GaAs system. In addition, a simple variant for the introduction of corrections to the deviation from Vegard's law in the X-ray data is suggested.

• 出版日期2012-11