Analytic modeling of potential and threshold voltage for short-channel thin-body fully depleted silicon-on-insulator MOSFETs with a vertical Gaussian doping profile

作者：Wei, Sufen; Zhang, Guohe^*; Shao, Zhibiao; Huang, Huixiang; Geng, Li

来源：Japanese Journal of Applied Physics, 2016, 55(10): 104201.

DOI：10.7567/JJAP.55.104201

• ULTRATHIN SOI MOSFETS
• DOUBLE-GATE MOSFETS
• FLUCTUATIONS

We verify that one-dimensional (1D) Gaussian expression is an appropriate approximation of the vertical doping profile, which is obtained by combining perpendicular ion implantation and rapid thermal annealing (RTA), for short-channel thin-body (20-30 nm) fully depleted (FD) silicon-on-insulator (SOI) MOSFETs. The two-dimensional (2D) potential distribution of the silicon film is derived by adopting the evanescent mode analysis method, in which the potential function is broken into 1D long-channel and 2D short-channel potentials. The threshold voltage model is represented by the minimum front-and back-surface potentials of the silicon film. The application of the threshold voltage model can be extended to a 12 nm channel length. The results obtained using the models match well with the 2D numerical simulation results obtained using the Synopsys Sentaurus Device (TM). They provide a feasible way of developing new 2D models for nonuniform nanoscale thin-body FD-SOI devices.

• 出版日期2016-10
• 单位集美大学; 西安交通大学