Second-order optical susceptibility in doped III-V piezoelectric semiconductors in presence of magnetostatic field

作者：Aghamkar P; Lal Bhajan^*

来源：Journal of Optoelectronics and Advanced Materials, 2011, 13(1-2): 41-48.

• Second-order susceptibility
• Piezoelectricity
• Magnetostatic field
• Doped III-V semiconductor

A detailed analytical investigation of second-order optical susceptibility has been made in moderately doped III-V weakly piezoelectric semiconductor crystal, viz. n-InSb, in the absence and presence of an external magnetostatic field, using the coupled mode theory. The second-order optical susceptibility arises from the nonlinear interaction of pump beam with internally generated density and acoustic perturbations. Effect of doping concentration, magnetostatic field and pump intensity on second-order optical susceptibility of III-V semiconductors has been studied in detail. The numerical estimates are made for n-type InSb crystals duly shined by pulsed 10.6 mu m CO2 laser and efforts are made towards optimizing the doping level, applied magnetostatic field and pump intensity to achieve large value of second-order optical susceptibility and alteration of its sign. The enhancement and change of sign of second-order optical susceptibility in weakly piezoelectric III-V semiconductor under proper selection of doping concentration and externally applied magnetostatic field confirms them as potential candidate materials for the fabrication of nonlinear optical devices. In particular, at B-0=14.1 T, the second-order susceptibility was found to be 3.4x 10(-7) (SI unit) near resonance condition.

• 出版日期2011-1