摘要

Memristor, recently acclaimed as the fourth fundamental circuit element, was theoretically predicted by Leon Chua in 1971 though its single device electronic implementation. However, it did not draw much attention until the recent TiO 2-based nanoscale physical memristor was designed by the HP Labs researchers in 2008 while they were developing crossbar-based ultra high-density nonvolatile memories. Memristor based hybrid nanoscale CMOS technology is expected to profoundly impact the Flash memory industries, and also revolutionize the digital and neuromorphic computing. There are many exciting achievements have been reported by literatures, but with very little researches about memcapacitor and meminductor. This paper extends the notion of memristive systems to capacitive and inductive elements by theoretical derivation. By utilizing the existing memristor and mutator model, one can transport the reported results of memristor, including methodology and techniques to memcapacitor and meminductor in different applications. Then, in the proposed implementation scheme, the memristive elements can be also employed to substitute for the other three fundamental elements in Low Pass Filter and integration circuit; it has promising applications in signal processing. A series of reported SPICE simulations and numerical analysis verify the effectiveness of the proposed scheme.