Analysis of Stochastic Effect in Line-and-Space Resist Patterns Fabricated by Extreme Ultraviolet Lithography

作者：Kozawa Takahiro^*; Santillan Julius Joseph; Itani Toshiro

来源：Applied Physics Express, 2013, 6(2): 026502.

DOI：10.7567/APEX.6.026502

Extreme ultraviolet (EUV) lithography is promising for the high-volume production of semiconductor devices for the 16nm node and below. However, the stochastic effect is a significant concern in lithography using high-energy (92.5 eV) photons and highly sensitive resists. In this study, we report a technique for evaluating the stochastic effect on line edge roughness (LER). Resist patterns were analyzed using a Monte Carlo simulation on the basis of the sensitization and reaction mechanisms of chemically amplified EUV resists. The contribution of protected unit fluctuation to LER was estimated to be +/- 0.31 to +/- 0.37 sigma.

• 出版日期2013-2