Modeling and analysis of gate-all-around silicon nanowire FET

作者：Chen Xiangchen^*; Tan Cher Ming

来源：Microelectronics Reliability, 2014, 54(6-7): 1103-1108.

DOI：10.1016/j.microrel.2013.12.009

In this paper, we report the TCAD study on gate-all-around (GM) silicon nanowire (SiNW) FET. The device carrier transport physics, self-heating effect and process induced stress effect are discussed. With a comparison study between GM SiNW FET and FinFET, the advantages of GAA SiNW FET on gate controllability and short channel effect immunity are evaluated.

• 出版日期2014-7
• 单位南阳理工学院