Annealing ambient controlled deep defect formation in InP

作者：Zhao YW^*; Dong ZY; Duan ML; Sun WR; Zeng YP; Sun NF; Sun TN

来源：The European Physical Journal - Applied Physics, 2004, 27(1-3): 167-169.

DOI：10.1051/epjap:2004096

Deep defects in annealed InP have been investigated by deep level transient capacitance spectroscopy (DLTS), photo induced current transient spectroscopy (PICTS) and thermally stimulated current spectroscopy (TSC). Both DLTS results of annealed semiconducting InP and PICTS and TSC results of annealed semi-insulating InP indicate that InP annealed in phosphorus ambient has five defects, while lid? annealed in iron phospbide ambient has two defects. Such a defect formation phenomenon is explained in terms of defect suppression by the iron atom diffusion process. The correlation of the defects and the nature of the defects in annealed InP are discussed based on the results.

• 出版日期2004-9
• 单位中国科学院