摘要

A dual-wavelength vertical-cavity surface-emitting laser with an asymmetric one-dimensional photonic crystal structure was demonstrated based on the band-gap theory. The wavelengths of the VCSEL can be located at 979.7 and 943 nm with the aid of the Al(0.8)Ga(0.2)As defect layer. Particularly, the lasing of the dual-wavelength VCSEL was in the same light propagation direction for both the wavelengths with a high Q factor. Furthermore, the relative peaks position of the two wavelengths can be tuned from similar to 33 to similar to 50 nm by adjusting the refractive index contrast of the asymmetric photonic crystal structure, which will promote the formation of multidefect mode states.

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