Annealing effects on properties of Ag-N dual-doped ZnO films

作者：Duan, Li^*; Zhang, Wenxue; Yu, Xiaochen; Jiang, Ziqiang; Luan, Lijun; Chen, Yongnan; Li, Donglin

来源：Applied Surface Science, 2012, 258(24): 10064-10067.

DOI：10.1016/j.apsusc.2012.06.075

• ZnO
• Dual-doping
• Post-annealing
• Sol-gel method

Ag-N dual-doped p-type ZnO (ZnO:(Ag,N)) thin films have been prepared using the sol-gel method. The modifications of the structural, electrical and optical properties of ZnO:(Ag,N) films after annealing in various atmosphere in the temperature range of 300-600 degrees C are discussed. Results show the oxygen-rich environment is benefit to the p-type samples. Transition from n-type to p-type conduction occurred at the annealing temperature of 400 degrees C. The optimum annealing temperature is about 500 degrees C.

• 出版日期2012-10-1
• 单位长安大学