Low-Stress Highly-Conductive In-Situ Boron Doped Ge0.7Si0.3 Films by LPCVD

作者：Kazmi S N R^*; Kovalgin A Y; Aarnink A A I; Salm C; Schmitz J

来源：ECS Journal of Solid State Science and Technology, 2012, 1(5): P222-P226.

DOI：10.1149/2.008205jss

This paper reports on low pressure chemical vapor deposited in-situ boron doped polycrystalline germanium-silicon layers with 70% germanium content. The effect of diborane partial pressure on the properties of the GeSi alloy is investigated. The obtained high boron concentration results in resistivity values less than 1 m Omega-cm. The layers deposited at low partial pressures of B2H6 exhibit very low stress down to -3 MPa. With increasing B2H6 partial pressure first the stress changes from tensile to compressive, followed by a phase transition from polycrystalline to amorphous. The highly doped, low stress poly-Ge0.7Si0.3 layers deposited at 430 degrees C are further applied in high-Q microelectromechanical resonators envisaged for above-IC integration with CMOS.

• 出版日期2012