Accurate Sub-1 V CMOS Bandgap Voltage Reference with PSRR of-118 dB

作者:Abbasizadeh Hamed; Cho Sung Hun; Yoo Sang Sun; Lee Kang Yoon*
来源:Journal of Semiconductor Technology and Science, 2016, 16(4): 528-533.
DOI:10.5573/JSTS.2016.16.4.528

摘要

A low voltage high PSRR CMOS Bandgap circuit capable of generating a stable voltage of less than 1 V (0.8 V and 0.5 V) robust to Process, Voltage and Temperature (PVT) variations is proposed. The high PSRR of the circuit is guaranteed by a low-voltage current mode regulator at the central aspect of the bandgap circuitry, which isolates the bandgap voltage from power supply variations and noise. The isolating current mirrors create an internal regulated voltage V-reg for the BG core and Op-Amp rather than the VDD. These current mirrors reduce the impact of supply voltage variations. The proposed circuit is implemented in a 0.35 mu m CMOS technology. The BGR circuit occupies 0.024 mm(2) of the die area and consumes 200 mu W from a 5 V supply voltage at room temperature. Experimental results demonstrate that the PSRR of the voltage reference achieved -118 dB at frequencies up to 1 kHz and -55 dB at 1 MHz without additional circuits for the curvature compensation. A temperature coefficient of 60 ppm/degrees C is obtained in the range of -40 to 120 degrees C.

  • 出版日期2016-8