AlGaN/GaN HEMT on (111) single crystalline diamond

作者：Alomari M^*; Dussaigne A; Martin D; Grandjean N; Gaquiere C; Kohn E

来源：Electronics Letters, 2010, 46(4): 299-300.

DOI：10.1049/el.2010.2937

AlGaN/GaN HEMTs have been fabricated directly on (111) oriented single crystal diamond with 1.3 x 10(13) cm(-2) channel sheet charge density and 731 cm(2)/Vs mobility. 0.2 mu m gate length devices showed 0.73 A/mm maximum drain current density and f(T) and f(max) cutoff frequencies of 21 and 42 GHz.

• 出版日期2010-2-18