X-ray absorption spectroscopy study of the local structures of crystalline Zn-In-Sn oxide thin films

作者：Proffit D E^*; Buchholz D B; Chang R P H; Bedzyk M J; Mason T O; Ma Q

来源：Journal of Applied Physics, 2009, 106(11): 113524.

DOI：10.1063/1.3259385

• bond lengths
• doping profiles
• Hall effect
• indium compounds
• pulsed laser deposition
• semiconductor doping
• semiconductor growth
• semiconductor thin films
• tin
• X-ray absorption spectra
• zinc

The local structure of a Zn, Sn codoped In(2)O(3) thin film grown on c-plane sapphire by pulsed-laser deposition was examined by polarization-dependent x-ray absorption spectroscopy. The bixbyite film structure is both out-of-plane and in-plane oriented, and the structural results show that both Zn and Sn dopants occupy In sites. The In-O bond length is comparable to that in powder In(2)O(3). However, both Sn-O and Zn-O bonds have two distinct distances in the first shell. Some of the Zn dopants are undercoordinated and, accordingly, some isovalent Sn dopants are overcoordinated for charge balance. In addition, the results suggest that the aliovalent Sn dopants form Frank-Koumlstlin clusters, (2Sn(In)O(i))(x), which provide enough charge carriers to explain the Hall measurements.

• 出版日期2009-12-1
• 单位西北大学