Using Taguchi Method to Optimize Polishing Parameters in Ice Fixed Abrasive Polishing

作者：Sun Yuli^*; Zuo Dunwen; Zhu Yongwei; Li Jun

来源：Materials and Manufacturing Processes, 2013, 28(8): 923-927.

DOI：10.1080/10426914.2013.792419

• Abrasive
• Ice
• Optimization
• Polishing
• Silicon

Ice fixed abrasive polishing (IFAP) was used to polish single crystal silicon wafer. Polishing parameters were polishing pressure, table velocity, eccentricity, and polishing time. Using Taguchi method, the influences of the polishing parameters on material removal rate (MRR) and surface roughness (Sa) were invested. The results show that polishing pressure plays the most significant role on MRR followed by table velocity; as far as Sa is concerned; polishing time is the most important one, followed by table velocity. In order to get high MRR during IFAP of silicon wafer, the optimal processing parameters are: polishing pressure 0.1MPa, table velocity 400r/min, eccentricity 30mm, and polishing time 60min. The best Sa can be obtained when the optimal processing parameters are: polishing pressure 0.075MPa, table velocity 300r/min, eccentricity 20mm, and polishing time 40min. The experimental results illustrate that the Taguchi method is a viable way to obtain the optimum conditions for high MRR and best Sa.

• 出版日期2013-8-3
• 单位南京大学