A novel high voltage LIGBT with an n-region in p-substrate

作者：Cheng Jianbing^*; Zhang Bo; Li Zhaoji

来源：Chinese Journal of Semiconductors, 2011, 32(11).

DOI：10.1088/1674-4926/32/11/114003

• Blocking capability
• current capability
• Drift regions
• Field modulation
• High currents
• High voltage
• Lateral insulated gate bipolar transistors
• Low area
• NR-LIGBT
• Turn-off time

A novel 4 μm thickness drift region lateral insulated gate bipolar transistor with a floating n-region (NR-LIGBT) in p-substrate is proposed. Due to the field modulation from the n-region, the vertical blocking capability is enhanced and the breakdown voltage is improved significantly. Low area cost, high current capability and short turn-off time are achieved because of the high average electric field per micron. Simulation results show that the blocking capability of the new LIGBT increases by about 58% when compared with the conventional LIGBT (C-LIGBT) for the same 100 μm drift region length. Furthermore, the turn-off time is shorter than that of the conventional LIGBT for nearly same blocking capability.

• 出版日期2011
• 单位南京邮电大学