(Zr, Sn)TiO4 thin films for application in electronics

作者：Nistor M; Gherendi F; Magureanu M; Mandache NB; Ioachim A; Banciu MG; Nedelcu L; Popescu M; Sava F; Alexandru HV^*

来源：Applied Surface Science, 2005, 247(1-4): 169-174.

DOI：10.1016/j.apsusc.2005.01.124

• zirconium tin titanate
• pulsed electron deposition
• thin films

Thin films of zirconium tin titanate, (Zr0.8Sn0.2)TiO4 (ZST) were deposited using a pulsed electron beam source based on a channel-spark discharge for target ablation. An advanced degree of crystallization was obtained for the films deposited on alumina substrate post-annealed at 1000 degrees C. The crystalline lattice constants of the films are very close to those of the target material, which confirms the same stoichiometry in ZST films and in the bulk.

• 出版日期2005-7-15