Broadband Phototransistor Based on CH3NH3PbI3 Perovskite and PbSe Quantum Dot Heterojunction

作者：Yu, Yu; Zhang, Yating^*; Zhang, Zhang; Zhang, Haiting; Song, Xiaoxian; Cao, Mingxuan; Che, Yongli; Dai, Haitao; Yang, Junbo; Wang, Jianlong; Zhang, Heng; Yao, Jianquan

来源：Journal of Physical Chemistry Letters, 2017, 8(2): 445-451.

DOI：10.1021/acs.jpclett.6b02423

• SOLAR-CELLS
• HALIDE PEROVSKITES
• CHARGE-TRANSFER
• THIN-FILM
• GRAPHENE
• PHOTODETECTOR
• ULTRAVIOLET
• TRANSISTORS
• SURFACES
• VOLTAGE

Organic lead halide perovskites have received a huge amount of interest since emergence, because of tremendous potential applications in optoelectronic devices. Here field effect phototransistors (FEpTs) based on CH3NH3PbI3 perovskite/PbSe colloidal quantum dot heterostructure are demonstrated. The high light absorption and optoelectric conversion efficiency, due to the combination of perovskite and quantum dots, maintain the responsivities in a high level, especially at 460 nm up to 1.2 A/W. The phototransistor exhibits bipolar behaviors, and the carrier mobilities are determined to be 0.147 cm(2)V(-1)s(-1) for holes and 0.16 cm(2)V(-1)s(-1) for electrons. The device has a wide spectral response spectrum ranging from 300 to 1500 nm. A short photoresponse time is less than 3 ms due to the assistance of heterojunction on the transfer of photoexcitons. The excellent performances presented in the device especially emphasize the CH3NH3PbI3 perovskite-PbSe quantum dot as a promising material for future photoelectronic applications.

• 出版日期2017-1-19
• 单位天津大学; 中国人民解放军国防科学技术大学