Depth profiling of strain and carrier concentration by cleaved surface scanning of GaN Gunn-diode: confocal Raman microscopy

作者：Belyaev A E^*; Strelchuk V V; Nikolenko A S; Romanyuk A S; Mazur Yu I; Ware M E; DeCuir E A Jr; Salamo G J

来源：Semiconductor Science and Technology, 2013, 28(10): 105011.

DOI：10.1088/0268-1242/28/10/105011

Confocal micro-Raman spectroscopy was applied to study the cleaved surface of vertical GaN Gunn-diode structure grown by molecular-beam epitaxy. The analysis of lateral scanning along the cleaved edge reveals the depth profile of elastic strain, quality of the crystal structure, and the concentration of charge carriers. Results are compared with that of axial confocal Raman depth profiling normal to the structure's surface. Decrease of compressive strain near the cleaved edge in the direction from the substrate to the structure's surface and in the growth plane towards the cleaved edge is shown. The decrease in charge carrier concentration in the undoped n(0)-GaN channel region in comparison with the n(+)-GaN contact region is identified. Peculiarities of the resulting spatial profiles of free charge carriers and their correlation with the initial doping profile are discussed.

• 出版日期2013-10