Space-charge-limited current involving carrier injection into impurity bands of high-k insulators

作者：Goldenblum A; Pintilie I^*; Buda M; Popa A; Botila T; Dimoulas A; Vellianitis G

来源：Applied Physics Letters, 2005, 86(20): 203506.

DOI：10.1063/1.1935045

Photoelectrical measurements have shown that the current flow through La2Hf2O7 and LaAlO3 high-k insulator layers deposited on silicon takes place via impurity channels. A space charge limited current is evidenced, for different insulator thicknesses and temperatures, by the square law dependence of current versus voltage. The analysis demonstrates that this space charge limited (SCL) current in thin insulator films can be explained only by the presence of impurity channels situated near the Fermi level of the injecting contact. Many other aspects related to the SCL current behavior were found.

• 出版日期2005-5-16