A charge-based capacitance model for AlGaAs/GaAs HEMTs

作者：Khandelwal Sourabh^*; Yigletu F M; Iniguez B; Fjeldly Tor A

来源：Solid-State Electronics, 2013, 82: 38-40.

DOI：10.1016/j.sse.2013.01.017

• AlGaAs/GaAs HEMT
• 2-DEG charge density
• Analytical models
• MODFETs

In this paper we present a charge-based analytical model for the intrinsic capacitances in AlGaAs/GaAs HEMTs. The model is developed from a consistent solution of Schrodinger%26apos;s and Poisson%26apos;s equations in the quantum well of these devices. The Ward-Dutton charge-partitioning scheme is used to derive the expressions for the drain and source charges. The proposed model is in a good agreement with experimental data.

• 出版日期2013-4