A method to characterize the sheet resistance of a laser doped line on crystalline silicon wafers for photovoltaic applications

作者：Wang Kee Soon^*; Tjahjono Budi S; Uddin Ashraf; Wenham Stuart R

来源：Applied Physics Letters, 2011, 98(9): 094105.

DOI：10.1063/1.3560056

A theory is presented that correlates the different sheet resistance (R(sh)) values of the same phosphorus laser doped (LD) line approximated by two different methods: the LD box and transfer length measurement (TLM) methods. By modeling the LD line junction profile, an effective R(sh) value using the LD box method is obtained and used to derive the Rsh upper limit (R(sh.UL)) of the LD line. This value matches within +/- 10% of the R(sh.UL) value obtained using the TLM method across four lasing speeds. Subsequently, a LD box method is introduced to determine the LD line R(sh.UL) easily without modeling work.

• 出版日期2011-2-28