Bismuth catalyzed growth of silicon nanowires by electron beam evaporation

作者：Kumar R Rakesh^*; Rao K Narasimha; Phani A R

来源：Materials Letters, 2012, 82: 163-166.

DOI：10.1016/j.matlet.2012.05.090

• Semiconductors
• Silicon nanowires
• Bismuth catalyst
• Electron beam evaporation
• Thin films

Silicon nanowires (NWs) have been grown in the vapor phase for the first time with bismuth (Bi) as a catalyst using the electron beam evaporation method at a low substrate temperature of 280 degrees C. The grown Si nanowires were randomly oriented on the substrate with an average length of 900 nm for a deposition time of 15 min. Bi faceted nanoparticles (crowned) at the end of the grown Si nanowires have been observed and attributed to the Vapor-Liquid-Solid (VLS) growth mechanism. Transmission Electron Microscopy analysis on the nanowires revealed their single crystalline nature and interestingly bismuth particles were observed in Si nanowires. The obtained results have shown a new window for Si nanowires growth with bismuth as a catalyst.

• 出版日期2012-9-1