Unipolar Resistive Switching Characteristics of a ZrO2 Memory Device With Oxygen Ion Conductor Buffer Layer

作者：Lee Dai Ying^*; Tseng Tseung Yuen

来源：IEEE Electron Device Letters, 2012, 33(6): 803-805.

DOI：10.1109/LED.2012.2192252

• Oxygen ion migration
• resistive random access memory (RRAM)
• unipolar switching
• ZrO2 film

Oxygen ion migration is an important factor in the formation and rupture of a conducting filament to cause resistive switching (RS) behavior. A calcium oxide-doped zirconium oxide (CaO:ZrO2) oxygen ion conductor buffer layer is introduced between the Ti/ZrO2 interface of conventional Ti/ZrO2/Pt memory devices to improve their unipolar RS properties. Increasing the CaO doping concentration to 2 mol% introduces higher oxygen vacancy content within the CaO:ZrO2 buffer layer, leading to higher oxygen ion conductivity. This allows more oxygen ions to migrate from the oxygen reservoir laterally and vertically across the 2-mol% CaO:ZrO2 buffer layer to the region where the conducting filament forms and ruptures. Therefore, the Ti/2-mol% CaO:ZrO2/ZrO2/Pt device in this letter exhibits good endurance, high-speed switching (50 ns) without soft errors, stubborn nondestructive readout, and stable retention at 150 degrees C.

• 出版日期2012-6