High near-infrared transparency and carrier mobility of Mo doped In2O3 thin films for optoelectronics applications

作者：Parthiban S; Elangovan E; Ramamurthi K^*; Martins R; Fortunato E

来源：Journal of Applied Physics, 2009, 106(6): 063716.

DOI：10.1063/1.3224946

Molybdenum (0-1 at. %) doped indium oxide thin films with high near-infrared (NIR) transparency and high carrier mobility were deposited on Corning-1737 glass substrates at 400 degrees C by a spray pyrolysis experimental technique. X-ray diffraction (XRD) analysis confirmed the cubic bixbyite structure of indium oxide. The preferred growth orientation along the (222) plane for the low Mo doping level (<= 0.5 at. %) shifts to (400) for higher Mo doping levels (>0.6 at. % ). The crystallite size extracted from the XRD data corroborates the changes in full width at half maximum due to the variation in Mo doping. A scanning electron microscopy study illustrated the evolution in the surface microstructure as a function of Mo doping. The negative sign of the Hall coefficient confirmed the n-type conductivity. A high carrier mobility of similar to 122.4 cm(2)/V s, a carrier concentration of similar to 9.5 x 10(19) cm(-3), a resistivity of similar to 5.3 x 10(-4) Omega cm, and a high figure of merit of similar to 4.2 x 10(-2) Omega(-1) are observed for the films deposited with 0.5 at. % Mo. The obtained high average transparency of similar to 83% in the wavelengths ranging from 400 to 2500 nm confirmed the extension of transmittance well into the NIR region.

• 出版日期2009-9-15