Artificial neural network applications in improved noise wave modeling of microwave FETS

作者：Marinkovic Zlatica D^*; Pronic Rancic Olivera; Markovic Vera

来源：Microwave and Optical Technology Letters, 2008, 50(10): 2512-2516.

DOI：10.1002/mop.23771

• noise parameters
• MESFET
• DG-MESFET
• artificial neural networks
• noise wave model

Art application of artificial neural networks (ANNs) for accuracy improving of the microwave FETs (MESFET/HEMT dual-Sate MESFET) noise modeling is presented ill this paper. The proposed model is based oil a basic transistor noise wave model, whose noise wave temperatures are assigned to be constant over the operating frequency range. A multilayer perceptron ANN is included in the model in order to adjust values of the noise parameters obtained by the original ware model to he more accurate. Numerical examples for noise parameters modeling are presented to show the validity and effectiveness of this appraoch.

• 出版日期2008-10