A 128-Stage Analog Accumulator for CMOS TDI Image Sensor

作者：Nie Kaiming; Yao Suying; Xu Jiangtao^*; Gao Jing; Xia Yu

来源：IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2014, 61(7): 1952-1961.

DOI：10.1109/TCSI.2014.2304663

• Analog accumulator
• CMOS image sensor
• signal-to-noise ratio (SNR)
• time delay integration (TDI)

The impacts of parasitic phenomenon on the performance of the analog accumulator in CMOS TDI image sensor are analyzed in this paper, and a modified accumulator with decoupling capacitor C-d to combat the parasitic phenomenon is also proposed. A 128-stage modified accumulator is designed and simulated. A prototype 1024 X 128 CMOS TDI image sensor with the 128-stage modified accumulator is fabricated in 0.18-mu m one-poly four-metal 1.8 V/3.3 V CMOS technology. With a line rate of 3875 lines/s, at 128 stages the measured sensitivity and SNR improvement of the fabricated sensor are 617.1 V/lux.s and 16.6 dB respectively. The simulation and experiment results have proved the effectiveness of the decoupling capacitor C-d when combating the parasitic phenomenon in the analog accumulator. The proposed modified accumulator is suitable for application in CMOS TDI image sensor with high stages.

• 出版日期2014-7
• 单位天津大学