Diffusion barrier performance of nanoscale TaNx thin-film

作者：Zhou Ji cheng^*; Chen Hai bo; Li You zhen

来源：Transactions of Nonferrous Metals Society of China, 2007, 17(4): 733-738.

DOI：10.1016/S1003-6326(07)60165-4

• reactive magnetron sputtering
• TaNx
• nanoscale thin-film
• Cu diffusion barrier
• diffusion barrier property

TaNx nanoscale thin-films and Cu/TaNx multilayer structures were deposited on P-type Si(100) substrates by DC reactive magnetron sputtering. The characteristics of Ta-x, films and thermal stabilities of Cu/TaNx/Si systems annealed at various temperatures were studied by four-point probe(FPP) sheet resistance measurement, atomic force microscopy(AFM), scanning electron microscope-energy dispersive spectrum (SEM-EDS), Alpha-Step IQ Profilers and X-ray diffraction(XRD), respectively. The results show that the surfaces of deposited TaNx thin-films are smooth. With the increasing of N-2 partial pressure, the deposition rate and root-mean-square(RMS) decrease, while the content of N and sheet resistance of the TaNx thin-films increase, and the diffusion barrier properties of TaNx thin-films is improved. TaN1.09 can prevent interdiffusion between Cu and Si effectively after annealing up to 650 degrees C for 60 s. The failure of TaNx is mainly attributed to the formation of Cu3Si on TaN/Si interface, which results from Cu diffusion along the grain boundaries of polycrystalline TaN.

• 出版日期2007-8
• 单位中南大学