Microstructure of heteroepitaxially grown RuO2 thin films on MgO by pulsed-laser deposition

作者：Jia QX^*; Lu P

来源：Philosophical Magazine B: Physics of Condensed Matter, Electronic, Optical and Magnetic Properties , 2001, 81(2): 141-149.

DOI：10.1080/13642810108216531

Conductive ruthenium oxide (RuO2) thin films with a room-temperature resistivity of 35 mu Omega cm and a residual resistivity ratio above 5 have been heteroepitaxially grown on MgO(100) substrates by pulsed-laser deposition. The heteroepitaxial growth of RuO2 on MgO is confirmed by both the strong in-plane and the strong out-of-plane orientation of the film with respect to major axes of the substrate. The orientation relationship between the RuO2 film and the MgO substrate, deduced from both X-ray and electron diffraction, is (110)(RuO2)\\(100)(MgO) and [001](RuO2)\\[011](MgO) (and [(1) over bar 10](RuO2)\\[0 (1) over bar(1) over bar](MgO)). High-resolution electron microscopy reveals that the epitaxial RuO2 film contains two variants that are consistent with the X-ray diffraction measurement.

• 出版日期2001-2
• 单位Los Alamos