Accelerated oxygen precipitation in fast neutron irradiated Czochralski silicon

作者：Ma QY; Li YX^*; Chen GF; Yang SA; Liu LL; Niu PJ; Chen DF; Li HT

来源：Chinese Physics, 2005, 14(9): 1882-1885.

DOI：10.1088/1009-1963/14/9/035

• oxygen precipitation
• neutron irradiation
• defects
• CZ-Si

Annealing effect of the oxygen precipitation and the induced defects have been investigated on the fast neutron irradiated Czochralski silicon (CZ-Si) by infrared absorption spectrum and the optical microscopy, It is found that the fast neutron irradiation greatly accelerates the oxygen precipitation that leads to a sharp decrease of the interstitial oxygen with the annealing time. At room temperature (RT), the 1107cm(-1) infrared absorption band of interstitial oxygen becomes weak and broadens to low energy side. At low temperature, the infrared absorption peaks appear at 1078cm(-1), 1096cm(-1), and 1182cm(-1), related to different shapes of the oxygen precipitates, The bulk microdefects, including stacking faults, dislocations and dislocation loops, were observed by the optical microscopy, New or large stacking faults grow up when the silicon self-interstitial atoms are created and aggregate with oxygen precipitation.

• 出版日期2005-9
• 单位河北工业大学; 中国原子能科学研究院; 天津工业大学