Unipolar resistive switching characteristics of ZnO thin films for nonvolatile memory applications

作者：Chang Wen Yuan; Lai Yen Chao; Wu Tai Bor^*; Wang Sea Fue; Chen Frederick; Tsai Ming Jinn

来源：Applied Physics Letters, 2008, 92(2): 022110.

DOI：10.1063/1.2834852

Highly (002)-oriented and columnar-grained ZnO thin films were prepared by radio frequency magnetron sputtering at room temperature. The Pt/ZnO/Pt devices exhibit reversible and steady bistable resistance switching behaviors with a narrow dispersion of the resistance states and switching voltage. Only a low forming electric field was required to induce the resistive switching characteristics. The resistance ratios of high resistance state to low resistance state were in the range of 3-4 orders of magnitude within 100 cycles of test. It was also found that the conduction mechanisms dominating the low and high resistance states are Ohmic behavior and Poole-Frenkel emission, respectively.

• 出版日期2008-1-14
• 单位清华大学