Limits on Charge Carrier Mobility in Suspended Graphene due to Flexural Phonons

作者:Castro Eduardo V*; Ochoa H; Katsnelson M I; Gorbachev R V; Elias D C; Novoselov K S; Geim A K; Guinea F
来源:Physical Review Letters, 2010, 105(26): 266601.
DOI:10.1103/PhysRevLett.105.266601

摘要

The temperature dependence of the mobility in suspended graphene samples is investigated. In clean samples, flexural phonons become the leading scattering mechanism at temperature T greater than or similar to 10 K, and the resistivity increases quadratically with T. Flexural phonons limit the intrinsic mobility down to a few m(2)/Vs at room T. Their effect can be eliminated by applying strain or placing graphene on a substrate.

  • 出版日期2010-12-22