An Improved Si Tunnel Field Effect Transistor With a Buried Strained Si1-xGex Source

作者：Zhao Q T^*; Hartmann J M; Mantl S

来源：IEEE Electron Device Letters, 2011, 32(11): 1480-1482.

DOI：10.1109/LED.2011.2163696

• SiGe
• strained Si (sSi)
• subthreshold swing (SS)
• tunneling field-effect transistors (TFETs)

We report on experimental and simulated results of tunneling field-effect transistors (TFETs) with a Si channel and a strained Si1-xGex source. The fabricated TFET with a tensile strained Si channel shows comparably large on-currents and a subthreshold slope of 80 mV/dec at 300 K for a drain current range of three orders of magnitude. A novel TFET structure is proposed to enhance the on-currents by using a buried Si1-xGex source. The overlap between the top thin Si channel and the buried SiGe source increases the tunneling area. Simulations indicate that this structure significantly improves the performance.

• 出版日期2011-11
• 单位中国地震局