摘要

The reconstruction process of the Si(111) root3 x root3 R30 degrees -Ag surface is studied by using a scanning tunnelling microscope at 78 K. By applying a strong interaction between the tip and the surface, a tip-induced reconstruction corresponding to the mergence of two Si(111) root3 x root3 R30 degrees -Ag domains is observed. Based on the inequivalent trimers (IET) model, this reconstruction process is attributed to a transition between the clockwise and counterclockwise IET domains. With this transition, the honeycomb-chained-trimer Si(111) root3 x root3 R30 degrees -Ag anti-phase boundary disappears and changes to the IET structure.