摘要

Increase in the power density of power modules requires an interconnection technology alternative to wire-bonding technology. Emerging interconnection technologies allow a 3-D packaging of power modules. A proposal of interconnection solution for the power semiconductor dice is presented here; it is based on copper microposts that are electroplated on topside of the die. The die with its microposts is then attached to a top direct-bonding copper (DBC) substrate using a copper/tin transient liquid phase technique. The assembly of the backside of the die to a bottom DBC substrate is processed concurrently using the same transient liquid phase technique. The benefits or limitations of the substrate on the assembly are not discussed in this letter. Manufacturing and electrical characterization of a power semiconductor die with the microposts interconnection is presented in detail.

  • 出版日期2010-7