All-Manganite Tunnel Junctions with Interface-Induced Barrier Magnetism

作者:Sefrioui Z; Visani C; Calderon M J; March K; Carretero C; Walls M; Rivera Calzada A; Leon C; Anton R Lopez; Charlton T R; Cuellar F A; Iborra E; Ott F; Imhoff D; Brey L; Bibes M*; Santamaria J; Barthelemy A
来源:Advanced Materials, 2010, 22(44): 5029-+.
DOI:10.1002/adma.201002067

摘要

In epitaxial heterostructures combining strongly correlated manganese oxides with antiferromagnetic-insulator or half-metallic character, a large interfacial moment is found and used to produce a spin-filter-like behavior in all-manganite tunnel junctions. The results suggest that after playing a key role in exchange-bias for spin-valves, uncompensated moments at engineered antiferromagnetic interfaces represent a novel route for generating highly spin-polarized currents with antiferromagnets.

  • 出版日期2010-11-24
  • 单位中国地震局