摘要
It was shown by Ouyang et al. [Appl. Phys. Lett. 86, 152901 (2005)] that the piezoelectric e(31,f) coefficient is largest parallel to the spontaneous polarization in tetragonal PbZrxTi1-xO3 (PZT) films. However, the expected piezoelectric data are typically calculated from phenomenological constants derived from data on ceramic PZT. In this work, the dependence of e(31,f) on c-axis texture fraction, f(001), for {001} PZT thin films was measured by growing films with systematically changed f(001) using CaF2, MgO, SrTiO3, and Si substrates. An approximately linear increase in e(31,f) with f(001) was observed for compositions up to 43 mol.% Zr, and 100% c-domain properties were extrapolated. It was demonstrated that c-axis PZT films can achieve e(31,f) exceeding -12 C/m(2) for many tetragonal compositions. The energy harvesting figure of merit, e(31,f)(2)/epsilon(r), for c-axis PZT films surpassed 0.8 C-2/m(4). This is larger than the figure of merit of gradient-free PZT films grown on Si substrates by a factor of four.
- 出版日期2014-9-14