摘要

An asperity-scale wear model was developed to predict feature-scale wear in chemical-mechanical polishing (CMP), and was compared to the measured evolution of a lithographically patterned feature during full-scale CMP tests. To conduct this study, a lithographic technique was used to pattern a set of raised square features into a Cu-coated silicon wafer. Two-dimensional contact profilometry was used to measure the topography of an isolated feature on each wafer both before polishing and at various intervals throughout the polishing process. In the wear modeling formulation, a pad deflection-based contact mechanics model was developed and combined with a particle-based wear model to predict the wear evolution of the sample during CMP. The predicted wear of the sample feature was found to agree well to experimental results.

  • 出版日期2010-2