Analysis of Losses in Open Circuit Voltage for an 18-mu m Silicon Solar Cell

作者：Wang Lu^*; Han Jianshu; Lochtefeld Anthony; Gerger Andrew; Barnett Allen

来源：Applied Sciences-Basel, 2015, 5(4): 682-694.

DOI：10.3390/app5040682

• V-oc losses analysis
• 18 mu m
• silicon solar cell

An 18 mu m thin crystalline silicon solar cell was demonstrated, and its best open circuit voltage is 642.3 mV. However, this value is far from the cell's theoretical upper limit in an ideal case. This paper explores the open circuit voltage losses of the thin silicon solar cell, starting from the ideal case, through first principle calculation and experiments. The open circuit voltage losses come from the introduced recombination due to the non-ideal surface passivation and contacts integration on front and rear surfaces, and edge isolation. This paper presents a roadmap of the open circuit voltage reduction from an ideal case of 767.0 mV to the best measured value of 642.3 mV.

• 出版日期2015-12