科研之友
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摘要
A simple methodology to prepare sub-100 nm resist nanopatterns with a high aspect ratio for the transfer of device nanofeatures is demonstrated. The novel method is based on a two- or multi-step developing process with the incorporation of an similar to 4 nm thick metal film to protect the fine resist nanopatterns in the developer solution. Using this approach, sub-100 nm resist nanopatterns of different shapes were readily fabricated using the positive- and negative-tone electron-beam resists. Subsequently, fine device nanostructures could be readily converted from these fine resist nanopatterns with a high aspect ratio.
- 出版日期2013-3
