科研之友
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摘要
The dependence of light trapping effects in In0.3Ga0.7As/GaAs quantum-well solar cells on wavelength and incident angle is experimentally characterized and analyzed. Separation of active device layers from their epitaxial growth substrate enables integration of thin-film semiconductor device layers with nanostructured metal/dielectric rear contacts to increase optical absorption via coupling to both Fabry-Perot resonances and guided lateral propagation modes in the semiconductor. The roles of Fabry-Perot resonances and coupling to guided modes are analyzed via photocurrent response measurements and numerical modeling for light incident at angles of 0 degrees (normal incidence) to 30 degrees off normal. Light trapping enables external quantum efficiency at long wavelengths as high as 2.9% per quantum well to be achieved experimentally, substantially exceeding the similar to 1% per quantum well level typically observed. Increased long wavelength quantum efficiency is shown in experimental measurements to persist with increasing angle of incidence and is explained as a consequence of the large number of guided modes available in the device structure.
- 出版日期2014-1-28
